| Week 1 |
Semiconductors in daily life, semiconducting material properties, energy levels in atoms, energy band formation, bandgap and material classification, electrons and holes, effective mass |
Homework 1 |
| Week 2 |
Carrier properties – intrinsic carrier density, Fermi level of an intrinsic semiconductor, donor and acceptor impurities, Fermi level in extrinsic semiconductors, temperature dependence of carrier density, generation and recombination of carriers |
Homework 2 |
| Week 3 |
Thermal motion of carriers, carriers under electric field, mobility and drift current, diffusion of carriers, general expression for current in a semiconductor, energy bands under electric fields |
Homework 3 |
| Week 4 |
pn junction electrostatics, fixed and free charge, depletion approximation, electric field at the junction, built-in potential, step junction vs linearly graded junction, energy band diagram of a PN Junction and quasi-Fermi levels |
Homework 4 |
| Week 5 |
pn junction under applied bias, minority carrier injection and spatial variation in depletion and quasi-neutral regions, band-bending under applied bias, ideal diode equation |
Homework 5 |
| Week 6 |
Diode non-idealities, breakdown, depletion and diffusion capacitance, p-i-n Diode, Metal Semiconductor Junctions |
Homework 6 |
| Week 7 |
Ideal MOS capacitor structure, Qualitative analysis of field effect, block charge, electric field and potential diagrams, energy band diagrams, Accumulation and inversion regimes, Gate voltage drop across a MOS device |
Homework 7 |
| Week 8 |
Threshold voltage of a MOS device, Capacitance-Voltage(CV) measurements, HFCV and LFCV of a MOS capacitor, Non-idealities in a MOS capacitor – work function difference and flatland voltage, tunneling over gate barrier and leakage current, high-k gate dielectrics |
Homework 8 |
| Week 9 |
Long Channel MOSFETs, energy band diagram and qualitative understanding of MOSFET operation, ID-VD and ID-VG relationships, square law theory of MOSFET, sub-threshold slope, performance metrics of a MOSFET |
Homework 9 |
| Week 10 |
Technology scaling and Moore’s law, qualitative understanding of Short channel effects – velocity saturation, channel length modulation, drain induced barrier lowering (DIBL), differences in IV characteristics of long and short channel MOSFETs, overview of modern FETs (FinFETs, tunnel FETs and nanowire transistors) |
Homework 10 |
| Week 11 |
Optoelectronic devices in daily life, III-V Semiconductors, direct and indirect bandgaps, optical absorption, pin photodetectors, solar cells, open circuit voltage and short circuit current |
Homework 11 |
| Week 12 |
Light emitting devices – Heterostructures, LEDs and their luminescent efficiency, double heterostructure and population inversion, diode lasers, LI characteristics and threshold current |
Homework 12 |